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Influence of gate dielectric on the ambipolar characteristics of solution-processed organic field-effect transistors

Title
Influence of gate dielectric on the ambipolar characteristics of solution-processed organic field-effect transistors
Authors
Ribierre J.C.Ghosh S.Takaishi K.Muto T.Aoyama T.
Ewha Authors
Jean Charles Ribierre
Issue Date
2011
Journal Title
Journal of Physics D: Applied Physics
ISSN
0022-3727JCR Link
Citation
vol. 44, no. 20
Indexed
SCI; SCIE; SCOPUS WOS scopus
Abstract
Solution-processed ambipolar organic field-effect transistors based on dicyanomethylene-substituted quinoidal quaterthiophene derivative [QQT(CN)4] are fabricated using various gate dielectric materials including cross-linked polyimide and poly-4-vinylphenol. Devices with spin-coated polymeric gate dielectric layers show a reduced hysteresis in their transfer characteristics. Among the insulating polymers examined in this study, a new fluorinated polymer with a low dielectric constant of 2.8 significantly improves both hole and electron field-effect mobilities of QQT(CN)4 thin films to values as high as 0.04 and 0.002 cm2 V-1 s-1. These values are close to the best mobilities obtained in QQT(CN)4 devices fabricated on SiO 2 treated with octadecyltrichlorosilane. The influence of the metal used for source/drain metal electrodes on the device performance is also investigated. Whereas best device performances are achieved with gold electrodes, more balanced electron and hole field-effect mobilities could be obtained using chromium. © 2011 IOP Publishing Ltd.
DOI
10.1088/0022-3727/44/20/205102
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자연과학대학 > 물리학전공 > Journal papers
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