DSpace at EWHA: Characterization of Pt/a-plane GaN Schottky contacts using conductive atomic force microscopy

View : 604 Download: 0

Full metadata record

DC Field	Value	Language
dc.contributor.author	김동욱	*
dc.date.accessioned	2016-08-28T12:08:13Z	-
dc.date.available	2016-08-28T12:08:13Z	-
dc.date.issued	2011	*
dc.identifier.issn	1533-4880	*
dc.identifier.other	OAK-7307	*
dc.identifier.uri	https://dspace.ewha.ac.kr/handle/2015.oak/221385	-
dc.description.abstract	We investigated the local electrical properties of Pt Schottky contacts to a-plane n-type GaN using conductive atomic force microscopy (C-AFM). Current-voltage characteristics obtained by C-AFM showed rectifying properties, indicating nano-scale Schottky junction formation. Two-dimensional current maps revealed that the surface microstructures of GaN influenced transport properties of the junctions. Copyright © 2011 American Scientific Publishers All rights reserved.	*
dc.language	English	*
dc.title	Characterization of Pt/a-plane GaN Schottky contacts using conductive atomic force microscopy	*
dc.type	Conference Paper	*
dc.relation.issue	2	*
dc.relation.volume	11	*
dc.relation.index	SCI	*
dc.relation.index	SCIE	*
dc.relation.index	SCOPUS	*
dc.relation.startpage	1413	*
dc.relation.lastpage	1416	*
dc.relation.journaltitle	Journal of Nanoscience and Nanotechnology	*
dc.identifier.doi	10.1166/jnn.2011.3396	*
dc.identifier.wosid	WOS:000287167900084	*
dc.identifier.scopusid	2-s2.0-84863045055	*
dc.author.google	Phark S.-H.	*
dc.author.google	Kim H.	*
dc.author.google	Song K.M.	*
dc.author.google	Kang P.G.	*
dc.author.google	Shin H.S.	*
dc.author.google	Kim D.-W.	*
dc.contributor.scopusid	김동욱(57203350633)	*
dc.date.modifydate	20240123114549	*