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Advantageous reverse recovery behavior of pentacene/ZnO diode

Title
Advantageous reverse recovery behavior of pentacene/ZnO diode
Authors
Lee K.H.Park A.Im S.Park Y.Kim S.H.Sung M.M.Lee S.
Ewha Authors
이승준
SCOPUS Author ID
이승준scopus
Issue Date
2010
Journal Title
Electrochemical and Solid-State Letters
ISSN
1099-0062JCR Link
Citation
vol. 13, no. 8, pp. H261 - H263
Indexed
SCOPUS WOS scopus
Abstract
We report on the ac and reverse recovery behavior of organic pentacene/ZnO thin-film diodes fabricated on plastic substrate. The 50 nm thin pentacene was evaporated on 60 nm thin ZnO that was deposited by atomic layer deposition at 100°C. Our thin-film diode showed a much faster reverse recovery (∼70 ns) compared to that (∼5 μs) of the Si control diode, although it also reveals a lower forward current of ∼3 mA at 2.5 V than that of the Si control (10 mA at 0.6 V). It is because our thin-film diode has little influence of the minority carrier unlike the Si control diode. We thus conclude that the pentacene/ZnO thin-film diode is promising as a fast switching device. © 2010 The Electrochemical Society.
DOI
10.1149/1.3428743
Appears in Collections:
엘텍공과대학 > 전자공학과 > Journal papers
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