Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 김동욱 | * |
dc.date.accessioned | 2016-08-28T12:08:04Z | - |
dc.date.available | 2016-08-28T12:08:04Z | - |
dc.date.issued | 2010 | * |
dc.identifier.issn | 0022-3727 | * |
dc.identifier.other | OAK-6459 | * |
dc.identifier.uri | https://dspace.ewha.ac.kr/handle/2015.oak/220693 | - |
dc.description.abstract | The temperature-dependent electrical properties of Pt Schottky contacts to nonpolar a-plane n-type GaN were investigated. Barrier height and ideality factor, estimated from the conventional thermionic emission model, were highly temperature dependent. A notable deviation from the theoretical Richardson constant value was also observed in the conventional Richardson plot. Analyses using the thermionic field emission model showed that consideration of defect-assisted tunnelling was necessary to explain the observed electrical behaviours. © 2010 IOP Publishing Ltd. | * |
dc.language | English | * |
dc.title | Current transport in Pt Schottky contacts to a-plane n-type GaN | * |
dc.type | Article | * |
dc.relation.issue | 16 | * |
dc.relation.volume | 43 | * |
dc.relation.index | SCI | * |
dc.relation.index | SCIE | * |
dc.relation.index | SCOPUS | * |
dc.relation.journaltitle | Journal of Physics D: Applied Physics | * |
dc.identifier.doi | 10.1088/0022-3727/43/16/165102 | * |
dc.identifier.wosid | WOS:000276703300007 | * |
dc.identifier.scopusid | 2-s2.0-77950995961 | * |
dc.author.google | Phark S.-H. | * |
dc.author.google | Kim H. | * |
dc.author.google | Song K.M. | * |
dc.author.google | Kang P.G. | * |
dc.author.google | Shin H.S. | * |
dc.author.google | Kim D.-W. | * |
dc.contributor.scopusid | 김동욱(57203350633) | * |
dc.date.modifydate | 20240123114549 | * |