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dc.contributor.author김동욱-
dc.date.accessioned2016-08-28T12:08:38Z-
dc.date.available2016-08-28T12:08:38Z-
dc.date.issued2009-
dc.identifier.issn0003-6951-
dc.identifier.otherOAK-6154-
dc.identifier.urihttp://dspace.ewha.ac.kr/handle/2015.oak/220427-
dc.description.abstractWe have grown SrTiO3 thin films by rf-sputtering and studied its photoluminescence (PL) property after postannealing treatments. While the as-grown film does not show any PL signal, visible frequency PL emissions are induced by high temperature (T>550 °C) annealing. When subsequent low-T (50 °C) and long term (>8 months) annealing was made, the PL-spectra evolved into another pattern in which four distinct luminescence peaks appear simultaneously at λ=1.8, 2.2, 2.7, and 3.1 eV. We propose that these remarkable room temperature PL effects are due to both metastable and energetically stabilized defect states formed inside the band gap. © 2009 American Institute of Physics.-
dc.languageEnglish-
dc.titlePhotoluminescence induced by thermal annealing in SrTiO3 thin film-
dc.typeArticle-
dc.relation.issue24-
dc.relation.volume95-
dc.relation.indexSCIE-
dc.relation.indexSCOPUS-
dc.relation.journaltitleApplied Physics Letters-
dc.identifier.doi10.1063/1.3275707-
dc.identifier.wosidWOS:000272954900017-
dc.identifier.scopusid2-s2.0-77956140100-
dc.author.googleRho J.-
dc.author.googleJang S.-
dc.author.googleKo Y.D.-
dc.author.googleKang S.-
dc.author.googleKim D.-W.-
dc.author.googleChung J.-S.-
dc.author.googleKim M.-
dc.author.googleHan M.-
dc.author.googleChoi E.-
dc.contributor.scopusid김동욱(34975062000)-
dc.date.modifydate20170601134832-


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