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Oxygen stability and leakage current properties of La-modified bismuth titanate ferroelectric thin films

Title
Oxygen stability and leakage current properties of La-modified bismuth titanate ferroelectric thin films
Authors
Shin R.H.Lee J.H.Kim G.Jo W.Kwon O.-J.Park C.Kim D.H.Lee H.J.Kang J.
Ewha Authors
조윌렴
SCOPUS Author ID
조윌렴scopus
Issue Date
2009
Journal Title
Japanese Journal of Applied Physics
ISSN
0021-4922JCR Link
Citation
vol. 48, no. 11
Indexed
SCI; SCIE; SCOPUS WOS scopus
Abstract
The effects of oxygen annealing on the structural properties and leakage current behaviors of sol-gel-derived Bi3 25La0.75Ti 3O12-y ferroelectric thin films have been studied. The thin films were pyrolyzed in different atmospheric conditions including a fully oxygenized ambient of 1 bar and an evacuated ambient of less than 10 mbar. X-ray diffraction patterns of the deoxygenated films showed measurable shifts to a higher angle, indicating that each deoxygenated film had a smaller lattice constant than the oxygenated one. Scanning probe analysis showed well-developed grains and inhomogeneous and asymmetric bound charges in both samples. The leakage current behavior of the films was measured as a function of voltage and temperature and was explained on the basis of the Schottky-Simmons thermionic emission model. X-ray photoemission spectra showed that oxygen stability in Bi2O2 layers plays an important role in determining the level of leakage current in the films. © 2009 The Japan Society of Applied Physics.
DOI
10.1143/JJAP.48.111407
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자연과학대학 > 물리학전공 > Journal papers
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