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Contact barriers in a single ZnO nanowire device

Title
Contact barriers in a single ZnO nanowire device
Authors
Kim K.Kang H.Kim H.Lee J.S.Kim S.Kang W.Kim G.-T.
Ewha Authors
강원
SCOPUS Author ID
강원scopus
Issue Date
2009
Journal Title
Applied Physics A: Materials Science and Processing
ISSN
0947-8396JCR Link
Citation
vol. 94, no. 2, pp. 253 - 256
Indexed
SCI; SCIE; SCOPUS WOS scopus
Abstract
The contact potential between a single ZnO nanowire and Ti/Au contacts was estimated to be ∼30 meV by considering the Arrhenious plot of the two-probe resistance, the thermionic emission conduction, and the Fowler-Nordheim tunneling model. The net voltages applied to the contacts were calculated by subtracting the four-probe voltages from the two-probe voltages at the same currents. The activation energy of the four-probe resistance was about 2.4 mV which was 1/11th of that of the two-probe resistance. The Fowler-Nordheim plot clearly showed the crossover of the conduction mechanism from thermionic emission to tunneling regime as lowering the temperatures below T<100 K. © 2008 Springer-Verlag.
DOI
10.1007/s00339-008-4787-5
Appears in Collections:
자연과학대학 > 물리학전공 > Journal papers
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