Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 조윌렴 | * |
dc.date.accessioned | 2016-08-28T11:08:41Z | - |
dc.date.available | 2016-08-28T11:08:41Z | - |
dc.date.issued | 2004 | * |
dc.identifier.issn | 0884-2914 | * |
dc.identifier.other | OAK-2232 | * |
dc.identifier.uri | https://dspace.ewha.ac.kr/handle/2015.oak/219440 | - |
dc.description.abstract | High-rate (10 nm/s) in situ YBa2Cu3O7 (YBCO) film growth was demonstrated by molecular beam epitaxy with electron beam co-evaporation at a system pressure of approximately 5 times; 10-5 Torr. To explain the phase stability observed, it is suggested that activated oxygen is generated in the process. Growth of very good YBCO, with a Jc of more than 2 MA/cm2, is possible at this very high rate because the growth is in a liquid (Ba-Cu-O), which forms along with the YBCO epitaxy. This liquid seems essential for high Jc-YBCO film growth at very high in situ growth rates and may be essential for all high-rate processes, including postanneal ex situ processes. | * |
dc.language | English | * |
dc.title | High rate in situ YBa2Cu3O7 film growth assisted by liquid phase | * |
dc.type | Article | * |
dc.relation.issue | 4 | * |
dc.relation.volume | 19 | * |
dc.relation.index | SCI | * |
dc.relation.index | SCIE | * |
dc.relation.index | SCOPUS | * |
dc.relation.startpage | 977 | * |
dc.relation.lastpage | 981 | * |
dc.relation.journaltitle | Journal of Materials Research | * |
dc.identifier.wosid | WOS:000222316400003 | * |
dc.identifier.scopusid | 2-s2.0-2342466696 | * |
dc.author.google | Ohnishi T. | * |
dc.author.google | Huh J.-U. | * |
dc.author.google | Hammond R.H. | * |
dc.author.google | Jo W. | * |
dc.contributor.scopusid | 조윌렴(7103322276) | * |
dc.date.modifydate | 20240123091004 | * |