An Efficient Method Including the Non-Quasistatic Effect for Frequency-Domain Simulation of Short Channel MOSFETs

Abstract

In this paper, we propose an efficient method including the nonquasistatic effect for a harmonic balance analysis of a short channel MOSFET. Our method is based on the charge-sheet model in the linear region and assumes that the saturation region is modulated by an external voltage instantaneously. By comparing the current responses under large signal conditions obtained from the time-dependent two-dimensional simulator (MEDICI), we confirmed that the proposed method is efficient and accurate for frequency-domain analyses of the short-channel MOSFETs in the 0.1-μm region.