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Dynamic and static photo-responses of n-ZnO/p-Si photodiodes

Title
Dynamic and static photo-responses of n-ZnO/p-Si photodiodes
Authors
Choi Y.S.Lee J.Y.Im S.Lee S.J.
Ewha Authors
이승준
SCOPUS Author ID
이승준scopus
Issue Date
2003
Journal Title
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
ISSN
0021-4922JCR Link
Citation
vol. 42, no. 4 A, pp. 1560 - 1562
Indexed
SCI; SCIE; SCOPUS WOS scopus
Abstract
We report on the photo-response behavior of n-ZnO/p-Si photodiodes. Semiconducting n-ZnO films have been deposited on p-Si substrate by RF sputtering at 300, 480 and 550°C. An optimum static photo-response was achieved from the photodiode prepared at 480°C as characterized by photocurrent measurements using a continuous monochromatic red illumination. Temporal photo-response of 35 ns was obtained from the same n-ZnO/p-Si diode to which a high frequency modulation of 1.5 MHz was applied for the dynamic response measurements. It is concluded that the n-ZnO/p-Si photodiode has good detecting capabilities in both of the dynamic and static photo-responses.
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엘텍공과대학 > 전자공학과 > Journal papers
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