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Eu5In2Sb6, Eu5In2-xZnxSb6: Rare earth zintl phases with narrow band gaps

Title
Eu5In2Sb6, Eu5In2-xZnxSb6: Rare earth zintl phases with narrow band gaps
Authors
Park S.-M.Eun S.C.Kang W.Kim S.-J.
Ewha Authors
김성진강원
SCOPUS Author ID
김성진scopus; 강원scopus
Issue Date
2002
Journal Title
Journal of Materials Chemistry
ISSN
0959-9428JCR Link
Citation
vol. 12, no. 6, pp. 1839 - 1843
Indexed
SCOPUS WOS scopus
Abstract
The new Zintl phase Eu5In2Sb6 was obtained from a direct element combination reaction in a sealed graphite tube at 870°C and its structure was determined. It crystallizes in the orthorhombic space group Pbam(No. 55), with a unit cell of a = 12.510(3) Å, b = 14.584(3) Å, c = 4.6243(9) Å, and Z = 2. Eu5In2Sb6 shows the Ca5Ga2As6-type structure and has a one-dimensional structure with infinite anionic double chains [In2Sb6]10- separated by Eu2+ ions. Each single chain is made of corner sharing InSb4 tetrahedra. Two such tetrahedral chains are bridged by a Sb2 group to form double chains. The compound satisfies the classical Zintl concept and is a narrow band gap semiconductor. The substitution of Zn for In atoms in Eu5In2Sb6 resulted in an increase in hole concentration and the material is more metallic. Polycrystalline ingots of Eu5In2Sb6 and Eu5In2-xZnx,Sb6 showed electrical conductivity of ∼36 S cm-1, ∼146 S cm-1 and Seebeck coefficient of ∼76 μV K-1and ∼51 μV K-1 at room temperature, respectively.
DOI
10.1039/b106812a
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자연과학대학 > 화학·나노과학전공 > Journal papers
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