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Chalcogenization-Derived Band Gap Grading in Solution-Processed CuInxGa1-x(Se,S)(2) Thin-Film Solar Cells

Title
Chalcogenization-Derived Band Gap Grading in Solution-Processed CuInxGa1-x(Se,S)(2) Thin-Film Solar Cells
Authors
Park, Se JinJeon, Hyo SangCho, Jin WooHwang, Yun JeongPark, Kyung SuShim, Hyeorg SeopSong, Jae KyuCho, YunaeKim, Dong-WookKim, JihyunMin, Byoung Koun
Ewha Authors
김동욱
SCOPUS Author ID
김동욱scopus
Issue Date
2015
Journal Title
ACS APPLIED MATERIALS & INTERFACES
ISSN
1944-8244JCR Link
Citation
vol. 7, no. 49, pp. 27391 - 27396
Keywords
solar cellsCIGSSesolution processband gap grading chalcogenization
Publisher
AMER CHEMICAL SOC
Indexed
SCI; SCIE; SCOPUS WOS scopus
Abstract
Significant enhancement of solution-processed CuInxGa1-x(Se,S)(2) (CIGSSe) thin-film solar cell performance was achieved by inducing a band gap gradient in the film thickness, which was triggered by the chalcogenization process. Specifically, after the preparation of an amorphous mixed oxide film of Cu, In, and Ga by a simple paste coating method chalcogenization under Se vapor, along with the flow of dilute H2S gas, resulted in the formation of CIGSSe films with graded composition distribution: S-rich top, In- and Se-rich middle, and Ga- and S-rich bottom. This uneven compositional distribution was confirmed to lead to a band gap gradient in the film, which may also be responsible for enhancement in the open circuit voltage and reduction in photocurrent loss, thus increasing the overall efficiency. The highest power conversion efficiency of 11.7% was achieved with J(sc) of 28.3 mA/cm(2), V-oc of 601 mV, and FF of 68.6%.
DOI
10.1021/acsami.5b09054
Appears in Collections:
자연과학대학 > 물리학전공 > Journal papers
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