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Surface photovoltage characterizations of Si nanopillar arrays for verifying field-effect passivation using a SiNx layer

Title
Surface photovoltage characterizations of Si nanopillar arrays for verifying field-effect passivation using a SiNx layer
Authors
Kim, EunahCho, YunaeSohn, AhrumKim, Dong-WookPark, Hyeong-HoKim, Joondong
Ewha Authors
김동욱
SCOPUS Author ID
김동욱scopus
Issue Date
2016
Journal Title
CURRENT APPLIED PHYSICS
ISSN
1567-1739JCR Link1878-1675JCR Link
Citation
vol. 16, no. 2, pp. 141 - 144
Keywords
NanopillarSiAntireflectionMie resonanceSurface photovoltage
Publisher
ELSEVIER SCIENCE BV
Indexed
SCI; SCIE; SCOPUS; KCI WOS scopus
Abstract
The surface photovoltage (SPV) characteristics of periodic nanopillar (NP) arrays formed on Si wafers were investigated. The NP arrays exhibited broadband omnidirectional antireflection effects with Mie resonance. Kelvin probe force microscopy (KPFM) revealed that the positive fixed charges in SiNx layers induced band bending at the Si surface and increased surface photovoltage (SPV) at the NP top surface. Estimated SPV values, determined by the amount of surface band bending, were similar in NPs and planar counterparts. This finding suggests that field effect passivation by the dielectric layer coating could help improve photovoltaic performance of nanostructure-based Si solar cells and that KPFM may be a useful tool for the investigation of surface electrical properties of Si nanostructures. (C) 2015 Elsevier B.V. All rights reserved.
DOI
10.1016/j.cap.2015.11.006
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자연과학대학 > 물리학전공 > Journal papers
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