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Improved Dielectric Properties of CaCu3Ti4O12 films with a CaTiO3 Inter layer on Pt/TiO2/SiO2/Si Substrates Prepared by Pulsed Laser Deposition

Title
Improved Dielectric Properties of CaCu3Ti4O12 films with a CaTiO3 Inter layer on Pt/TiO2/SiO2/Si Substrates Prepared by Pulsed Laser Deposition
Authors
Lee, Sung-YunKim, Hui EunJo, WilliamKim, Young-HwanYoo, Sang-Im
Ewha Authors
조윌렴
SCOPUS Author ID
조윌렴scopus
Issue Date
2015
Journal Title
ELECTRONIC MATERIALS LETTERS
ISSN
1738-8090JCR Link2093-6788JCR Link
Citation
vol. 11, no. 6, pp. 1003 - 1011
Keywords
CaCu3Ti4O12 filmspulsed laser depositiondielectric propertyPoole-Frenkel conduction modelleakage current
Publisher
KOREAN INST METALS MATERIALS
Indexed
SCIE; SCOPUS; KCI WOS scopus
Abstract
We report the greatly improved dielectric properties of CaCu3Ti4O12 (CCTO) films with a 60 nm-thick CaTiO3 (CTO) interlayer on Pt/TiO2/SiO2/Si substrates. Both CCTO films and CTO interlayers were prepared by pulsed laser deposition (PLD). With increasing the thickness of CCTO from 200 nm to 1.3 mu m, the dielectric constants (epsilon(r)) at 10 kHz in both CCTO single-layered and CCTO/CTO double-layered films increased from 260 to 6000 and from 630 to 3700, respectively. Compared with CCTO single-layered films, CCTO/CTO double-layered films irrespective of CCTO film thickness exhibited a remarkable decrease in their dielectric losses (tan delta) (<0.1 at the frequency region of 1 - 100 kHz) and highly reduced leakage current density at room temperature. The reduced leakage currents in CCTO/CTO double-layered films are attributable to relatively higher trap ionization energies in the Poole-Frenkel conduction model.
DOI
10.1007/s13391-015-5211-x
Appears in Collections:
자연과학대학 > 물리학전공 > Journal papers
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