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A comparative electrical transport study on Cu/n-type InP Schottky diode measured at 300 and 100 K

Title
A comparative electrical transport study on Cu/n-type InP Schottky diode measured at 300 and 100 K
Authors
Kim, HogyoungJung, Chan YeongKim, Se HyunCho, YunaeKim, Dong-Wook
Ewha Authors
김동욱
SCOPUS Author ID
김동욱scopus
Issue Date
2016
Journal Title
CURRENT APPLIED PHYSICS
ISSN
1567-1739JCR Link1878-1675JCR Link
Citation
vol. 16, no. 1, pp. 37 - 44
Keywords
n-type InPCurrent transport mechanismTunneling current
Publisher
ELSEVIER SCIENCE BV
Indexed
SCI; SCIE; SCOPUS; KCI WOS scopus
Abstract
Two oxygen plasma treated InP samples with different plasma powers of 100 and 250 W were prepared and a comparative study on the electrical properties of Cu/n-type InP Schottky diode measured at 300 and 100 K was performed to investigate the current transport mechanism in detail. The forward and reverse bias current-voltage (I-V) characteristics were analyzed with considering various transport models. The fitting to the forward bias I-V characteristics revealed that relatively high ideality factor at 300 K for untreated sample were related with the generation-recombination (GR) current and the large E-00 value at 100 K for 100 W plasma treated sample were associated with more significant tunneling effect. The analyses on the reverse bias current characteristics showed the suitable current transport model has changed from thermionic emission (TE) to TE combined with barrier lowering for both untreated and 250 W treated samples and from TE + BL to thermionic field emission for 100 W treated sample with increasing temperature from 100 to 300 K. (C) 2015 Elsevier B.V. All rights reserved.
DOI
10.1016/j.cap.2015.10.008
Appears in Collections:
자연과학대학 > 물리학전공 > Journal papers
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