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Spin-Transfer Torque Switching at Ultra Low Current Densities

Title
Spin-Transfer Torque Switching at Ultra Low Current Densities
Authors
Leutenantsmeyer, Johannes ChristianZbarsky, Vladyslavvon der Ehe, MarvinWittrock, SteffenPeretzki, PatrickSchuhmann, HenningThomas, AndyRott, KarstenReiss, GuneterKim, Tae HeeSeibt, MichaelMuenzenberg, Markus
Ewha Authors
김태희
SCOPUS Author ID
김태희scopus
Issue Date
2015
Journal Title
MATERIALS TRANSACTIONS
ISSN
1345-9678JCR Link1347-5320JCR Link
Citation
vol. 56, no. 9, pp. 1323 - 1326
Keywords
spintransportspin-transfer torquecurrent induced switchingmagnetic tunnel junctionsperpendicular anisotropyNeel-Brown law
Publisher
JAPAN INST METALS
Indexed
SCI; SCIE; SCOPUS WOS scopus
Abstract
The influence of the tantalum buffer layer on the magnetic anisotropy of perpendicular Co-Fe-B/MgO based magnetic tunnel junctions is studied using magneto-optical Kerr-spectroscopy. Samples without a tantalum buffer are found to exhibit no perpendicular magnetization. The transport of boron into the tantalum buffer is considered to play an important role on the switching currents of those devices. With the optimized layer stack of a perpendicular tunnel junction, a minimal critical switching current density of only 9.3 kA/cm(2) is observed and the thermally activated switching probability distribution is discussed.
DOI
10.2320/matertrans.MA201570
Appears in Collections:
자연과학대학 > 물리학전공 > Journal papers
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