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Quintuple layer Bi2Se3 thin films directly grown on insulating SiO2 using molecular beam epitaxy

Title
Quintuple layer Bi2Se3 thin films directly grown on insulating SiO2 using molecular beam epitaxy
Authors
Jeon, Jeong HeumSong, MisunKim, HowonJang, Won-JunPark, Ji-YongYoon, SeokhyunKahng, Se-Jong
Ewha Authors
윤석현
SCOPUS Author ID
윤석현scopus
Issue Date
2014
Journal Title
APPLIED SURFACE SCIENCE
ISSN
0169-4332JCR Link1873-5584JCR Link
Citation
vol. 316, pp. 42 - 45
Keywords
Bismuth selenideTopological insulatorMolecular beam epitaxy
Publisher
ELSEVIER SCIENCE BV
Indexed
SCI; SCIE; SCOPUS WOS
Abstract
Topological insulator thin films on insulating SiO2 can be used in gate tunable devices, and have been prepared using exfoliation methods, but rarely with direct-growth methods. Here, we present our study to directly grow quintuple layer Bi2Se3 on insulating SiO2 using molecular beam epitaxy. We investigated atomic structures, stoichiometry, vibration modes, and surface morphology of the grown films using X-ray diffraction, Raman spectroscopy, and scanning tunneling microscopy, confirming that the grown films were Bi2Se3 quintuple layers. We then fabricated gate tunable devices using the films. Our study shows that Bi2Se3 can be directly prepared on non-crystalline insulator SiO2. (C) 2014 Elsevier B.V. All rights reserved.
DOI
10.1016/j.apsusc.2014.07.106
Appears in Collections:
자연과학대학 > 물리학전공 > Journal papers
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