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Observation of Barrier Inhomogeneity in Pt/a-plane n-type GaN Schottky Contacts

Title
Observation of Barrier Inhomogeneity in Pt/a-plane n-type GaN Schottky Contacts
Authors
Phark, Soo-HyonKim, HogyoungSong, Keun-ManKim, Dong-Wook
Ewha Authors
김동욱
SCOPUS Author ID
김동욱scopus
Issue Date
2011
Journal Title
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
ISSN
0374-4884JCR Link
Citation
vol. 58, no. 5, pp. 1356 - 1360
Keywords
a-plane GaNInhomogeneous barrierCurrent map
Publisher
KOREAN PHYSICAL SOC
Indexed
SCI; SCIE; SCOPUS; KCI WOS
Abstract
We carried our microscale and nanoscale investigations of the electrical properties of Pt/a-plane n-type GaN Schottky contacts. Using the thermionic emission (TE) model, we observed that both the barrier heights and ideality factors varied from diode to diode with a linear relationship between them, indicating a spatial fluctuation of barrier height. The thermionic field emission (TFE) model produced a better fit to the experimental current-voltage data than the TE model, which suggested that. tunneling, probably due to the presence of a large number of surface defects. played an important role in the Pt/a-plane n-type GaN Schottky contacts. A two-dimensional current map of the Schottky junctions using conductive atomic force microscopy revealed an inhomogeneous spatial current distribution, which confirmed the existence of an inhomogeneous barrier in the Schottky diodes.
DOI
10.3938/jkps.58.1356
Appears in Collections:
자연과학대학 > 물리학전공 > Journal papers
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