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Charge-based analytical current model for asymmetric Double-Gate MOSFETs

Title
Charge-based analytical current model for asymmetric Double-Gate MOSFETs
Authors
Park, JSLee, SJhee, YShin, H
Ewha Authors
지윤규신형순이승준
SCOPUS Author ID
지윤규scopus; 신형순scopus; 이승준scopus
Issue Date
2005
Journal Title
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
ISSN
0374-4884JCR Link
Citation
vol. 47, pp. S392 - S396
Keywords
current modelasymmetricDouble-gate MOSFETsinversion layersemiconductor device modeling
Publisher
KOREAN PHYSICAL SOC
Indexed
SCI; SCIE; SCOPUS; KCI WOS scopus
Abstract
A charge-based analytical current model for an asymmetric Double-Gate (DG) MOSFET is presented. This analytical model is based on the inversion charge instead of the surface potential, so that the volume-inversion characteristics of the thin-body DG MOSFET can be accurately considered. By comparing the model with the device simulation results, model accuracy is verified for the entire operating range, including the linear, saturation, and subthreshold regions.
Appears in Collections:
엘텍공과대학 > 전자공학과 > Journal papers
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