Showing results 23 to 28 of 28
Issue Date | Title | Author(s) | Type |
---|---|---|---|
2018 | New modeling method for the dielectric relaxation of a DRAM cell capacitor | 신형순; 선우경 | Article; Proceedings Paper |
2021 | New Simulation Method for Dependency of Device Degradation on Bending Direction and Channel Length | 신형순; 박지선 | Article |
2020 | Optimization Considerations for Short Channel Poly-Si 1T-DRAM | 신형순; 선우경 | Article |
2018 | Read margin analysis of crossbar arrays using the cell-variability-aware simulation method | 신형순; 선우경 | Article; Proceedings Paper |
2021 | Selected Bit-Line Current PUF: Implementation of Hardware Security Primitive Based on a Memristor Crossbar Array | 신형순 | Article |
2016 | Switching Time and Stability Evaluation for Writing Operation of STT-MRAM Crossbar Array | 신형순; 이승준 | Article |