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dc.contributor.author김성진*
dc.contributor.author한미경*
dc.date.accessioned2022-02-22T16:30:05Z-
dc.date.available2022-02-22T16:30:05Z-
dc.date.issued2022*
dc.identifier.issn0022-3727*
dc.identifier.otherOAK-30901*
dc.identifier.urihttps://dspace.ewha.ac.kr/handle/2015.oak/260547-
dc.description.abstractThe optimization of thermoelectric properties of the CuCrS Se x (x = 0, 0.5, 1.0, 1.5, 2) samples was achieved by substitution in anionic sublattice and sintering at high temperature. The maximum power factor PF ∼ 0.3 mW (m•K)-2 among a series of samples with chalcogen substitution was obtained for CuCrS0.5Se1.5 sample at T = 300 K. The sintering made it possible to obtain the maximum value PF ∼ 2.1 mW (m•K)-2 for CuCrSe2 sample. This is due to a more than threefold increase in the thermopower S(T) in CuCrSe2 sample with a spin-orbital interaction in comparison with CuCrS0.5Se1.5 sample with the same optimal electrical conductivity σ ( 100 S cm-1), but without spin-orbital interaction. In CuCrSe2 sample, sintering effectively reduced the σ to an optimal value, suppressed of the magnetic phase transition in the range of 50-100 K, and the weak localization were replaced by weak antilocalization indicating the appearance of strong spin-orbit interaction below 20 K. As a result, an additional contribution to the S(T) appeared due to the filtration of current carriers caused by the strong spin-orbit interaction. The effect of grain boundaries on the properties σ and S(T) of the samples was investigated. It was established that polycrystalline samples with a high sulfur content were low-conductivity materials consisting of high-conductivity crystallites with the charge carriers concentration cm-3 separated by low-conductivity grain boundaries with fluctuation-induced tunneling conductivity. Both the replacement of sulfur with selenium and sintering led to a decrease in the energy barriers connecting grain boundaries. Selenium-dominated samples (CuCrS0.5Se1.5 and CuCrSe2) had high electrical conductivity with negligible energy barriers between grain boundaries. Logarithmic quantum corrections to the electrical conductivity was observed below 20 K, which indicated a quasi-two-dimensional electron transport in these samples. © 2021 IOP Publishing Ltd.*
dc.languageEnglish*
dc.publisherIOP Publishing Ltd*
dc.subjectfiltration of current carriers*
dc.subjectreplacing chalcogens*
dc.subjectsintering*
dc.subjectspin-orbit interaction*
dc.subjectthermoelectric*
dc.titleEnhanced thermoelectric properties of polycrystalline CuCrS2-xSex(x = 0, 0.5, 1.0, 1.5, 2) samples by replacing chalcogens and sintering*
dc.typeArticle*
dc.relation.issue13*
dc.relation.volume55*
dc.relation.indexSCIE*
dc.relation.indexSCOPUS*
dc.relation.journaltitleJournal of Physics D: Applied Physics*
dc.identifier.doi10.1088/1361-6463/ac453e*
dc.identifier.wosidWOS:000736757200001*
dc.identifier.scopusid2-s2.0-85123455109*
dc.author.googleRomanenko A.I.*
dc.author.googleChebanova G.E.*
dc.author.googleKatamanin I.N.*
dc.author.googleDrozhzhin M.V.*
dc.author.googleArtemkina S.B.*
dc.author.googleHan M.-K.*
dc.author.googleKim S.-J.*
dc.author.googleWang H.*
dc.contributor.scopusid김성진(56812714700)*
dc.contributor.scopusid한미경(36069389600)*
dc.date.modifydate20240405124638*
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자연과학대학 > 화학·나노과학전공 > Journal papers
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