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New simulation method for dependency of device degradation on bending direction and channel length

Title
New simulation method for dependency of device degradation on bending direction and channel length
Authors
Choi Y.Park J.Shin H.
Ewha Authors
신형순박지선
SCOPUS Author ID
신형순scopus; 박지선scopus
Issue Date
2021
Journal Title
Materials
ISSN
1996-1944JCR Link
Citation
Materials vol. 14, no. 20
Keywords
Amorphous indium-gallium-zinc-oxide (a-IGZO)Bending stressChannel length dependencyDevice simulationFlexible thin-film transistor (TFT)Oxide TFTStrain simulation
Publisher
MDPI
Indexed
SCIE; SCOPUS scopus
Document Type
Article
Abstract
The dependency of device degradation on bending direction and channel length is analyzed in terms of bandgap states in amorphous indium-gallium-zinc-oxide (a-IGZO) films. The strain distribution in an a-IGZO film under perpendicular and parallel bending of a device with various channel lengths is investigated by conducting a three-dimensional mechanical simulation. Based on the obtained strain distribution, new device simulation structures are suggested in which the active layer is defined as consisting of multiple regions. The different arrangements of a highly strained region and density of states is proportional to the strain account for the measurement tendency. The analysis performed using the proposed structures reveals the causes underlying the effects of different bending directions and channel lengths, which cannot be explained using the existing simulation methods in which the active layer is defined as a single region. © 2021 by the authors. Licensee MDPI, Basel, Switzerland.
DOI
10.3390/ma14206167
Appears in Collections:
엘텍공과대학 > 전자공학과 > Journal papers
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