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dc.contributor.author반효경*
dc.date.accessioned2021-06-07T16:31:12Z-
dc.date.available2021-06-07T16:31:12Z-
dc.date.issued2021*
dc.identifier.issn2169-3536*
dc.identifier.otherOAK-29407*
dc.identifier.urihttps://dspace.ewha.ac.kr/handle/2015.oak/257586-
dc.description.abstractIn this article, we analyze Android applications' memory reference behaviors, and observe that smartphone memory accesses are different from traditional computer systems with respect to the following five aspects: 1) A limited number of hot pages account for a majority of memory writes, and these hot pages have similar logical addresses regardless of application types; 2) The identities of these hot pages are shared library, linker, and stack regions; 3) The memory access behaviors of hot pages do not change significantly as time progresses even after applications finish their launching; 4) The skewness of memory write accesses in Android is extremely stronger than that of desktop systems; 5) In predicting re-reference likelihood of hot pages, temporal locality is better than reference frequency. Based on these observations, we present a new smartphone memory management scheme for DRAM-NVM hybrid memory. Adopting NVM is effective in power-saving of smartphones, but NVM has weaknesses in write operations. Thus, we aim to identify write-intensive pages and place them on DRAM. Unlike previous studies, we prevent migration of pages between DRAM and NVM, which eliminates unnecessary NVM write traffic that accounts for 32-42% of total write traffic. By judiciously managing the admission of hot pages in DRAM, our scheme reduces the write traffic to NVM by 42% on average without performance degradations.*
dc.languageEnglish*
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC*
dc.subjectNonvolatile memory*
dc.subjectRandom access memory*
dc.subjectMemory management*
dc.subjectSocial networking (online)*
dc.subjectPerformance evaluation*
dc.subjectFocusing*
dc.subjectBrowsers*
dc.subjectAndroid*
dc.subjectsmartphone*
dc.subjectapplication*
dc.subjectmemory reference*
dc.subjectNVM*
dc.subjectwrite operation*
dc.subjecthybrid memory*
dc.titleCharacterization of Android Memory References and Implication to Hybrid Memory Management*
dc.typeArticle*
dc.relation.volume9*
dc.relation.indexSCIE*
dc.relation.indexSCOPUS*
dc.relation.startpage60997*
dc.relation.lastpage61009*
dc.relation.journaltitleIEEE ACCESS*
dc.identifier.doi10.1109/ACCESS.2021.3074179*
dc.identifier.wosidWOS:000645037800001*
dc.author.googleLee, Soyoon*
dc.author.googleBahn, Hyokyung*
dc.contributor.scopusid반효경(7003994561)*
dc.date.modifydate20240315133816*
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인공지능대학 > 컴퓨터공학과 > Journal papers
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