View : 189 Download: 0

Selective-Area Remote Epitaxy of ZnO Microrods Using Multilayer-Monolayer-Patterned Graphene for Transferable and Flexible Device Fabrications

Title
Selective-Area Remote Epitaxy of ZnO Microrods Using Multilayer-Monolayer-Patterned Graphene for Transferable and Flexible Device Fabrications
Authors
Jeong, JunseokJin, Dae KwonCha, JanghwanKang, Bong KyunWang, QingxiaoChoi, JoonghoonLee, Sang WookMikhailovskii, Vladimir YuNeplokh, VladimirAmador-Mendez, NunoTchernycheva, MariaYang, Woo SeokYoo, JinkyoungKim, Moon J.Hong, SuklyunHong, Young Joon
Ewha Authors
이상욱
SCOPUS Author ID
이상욱scopus
Issue Date
2020
Journal Title
ACS APPLIED NANO MATERIALS
ISSN
2574-0970JCR Link
Citation
ACS APPLIED NANO MATERIALS vol. 3, no. 9, pp. 8920 - 8930
Keywords
Remote epitaxyselective-area epitaxygrapheneZnOhydrothermal growthflexible device
Publisher
AMER CHEMICAL SOC
Indexed
SCIE; SCOPUS WOS
Document Type
Article
Abstract
Selective-area remote epitaxy (SA-REpi) is demonstrated for fabricating mechanically releasable position-controlled ZnO microrod (MR) arrays from donor wafers in an arrayed form. Intaglio-patterned graphene, consisting of basal single-layer graphene (SLG) overlayered with multilayer graphene (MLG) patterned with perforated holes, is transferred onto a GaN/Al2O3 wafer on which the hydrothermal synthesis is performed for growing ZnO MRs. The basal SLG area exposed through the MLG pattern yields ZnO MRs, whereas the MLG plateau inhibits the growth. The noncovalent remote epitaxial heterointerface enables the release of the MR overlayer in the arrayed form, and the original source wafer is refurbished for reproducibly repeating the SA-REpi. Density-functional theory calculations suggest that localized surface charge density is induced on the surface of SLG by the underlying GaN across ultrathin SLG, which possibly provides a driving force for precursor adatoms and the following remote epitaxy of ZnO. In contrast, the induction of the charge density redistribution does not clearly occur through MLG; so, that keeps the surface of MLG nearly charge-neutral. The diameter and spacing of ZnO MRs are controlled in a designed way by changing the pattern geometries. High-resolution scanning transmission electron microscopy reveals the remote heteroepitaxial relationship at an atomic level. The remote epitaxy is expected to provide an ideal platform to transfer the addressable spatial arrays of nano- or micro-architecture semiconductor components to arbitrary target surfaces directly after the growth without the assembly procedures.
Show the fulltext
DOI
10.1021/acsanm.0c01656
Appears in Collections:
자연과학대학 > 물리학전공 > Journal papers
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE