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Analysis of memory access latency considering page faults and TLB misses in NVM storage

Title
Analysis of memory access latency considering page faults and TLB misses in NVM storage
Authors
Park Y.Bahn H.
Ewha Authors
반효경
SCOPUS Author ID
반효경scopus
Issue Date
2018
Journal Title
Journal of Semiconductor Technology and Science
ISSN
1598-1657JCR Link
Citation
Journal of Semiconductor Technology and Science vol. 18, no. 1, pp. 14 - 19
Keywords
Memory accessNVMPage faultPage sizeTLB
Publisher
Institute of Electronics Engineers of Korea
Indexed
SCIE; SCOPUS; KCI WOS scopus
Document Type
Article
Abstract
As high performance NVM storage emerges, memory system configurations optimized for HDD should be revisited. This paper explores the performance of memory systems that use NVM as a storage device and discusses how such systems can be managed efficiently. Specifically, we analyze the memory access time separately for address translation latency and data access latency as the page size, read-ahead, and storage performances are varied. As the page fault cost becomes small under NVM storage, we observe that the bottleneck of memory systems can be shifted to address translation. We show that determining an appropriate page size can improve the address translation latency without increasing data access latency. We also show that turning off the read-ahead option is helpful in reducing data access latency. We expect that our new architecture with appropriate configurations will be helpful in the design of emerging memory systems. © 2018, Institute of Electronics Engineers of Korea. All rights reserved.
DOI
10.5573/JSTS.2018.18.1.014
Appears in Collections:
인공지능대학 > 컴퓨터공학과 > Journal papers
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