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Resonant Raman scattering spectroscopy of Ga P1-x Nx and Ga As1-x Nx in the ultraviolet range

Title
Resonant Raman scattering spectroscopy of Ga P1-x Nx and Ga As1-x Nx in the ultraviolet range
Authors
Yoon S.Geisz J.F.Han S.-H.Mascarenhas A.Rubhausen M.Schulz B.
Ewha Authors
윤석현
SCOPUS Author ID
윤석현scopus
Issue Date
2005
Journal Title
Physical Review B - Condensed Matter and Materials Physics
ISSN
1098-0121JCR Link
Citation
Physical Review B - Condensed Matter and Materials Physics vol. 71, no. 15
Indexed
SCIE; SCOPUS WOS scopus
Document Type
Article
Abstract
We report resonant Raman scattering studies of Ga P1-x Nx and Ga As1-x Nx in the ultraviolet (UV) spectral range. For both materials, strong intensity resonances and their rapid degradation near the respective E1 transition energies exhibited for the zone-center longitudinal optical phonons provide direct evidence that the L -point conduction-band edges of Ga P1-x Nx and Ga As1-x Nx are strongly perturbed by nitrogen impurities. We also show that UV resonant Raman scattering is a powerful means to study higher lying conduction-band electronic states of semiconductor alloys. © 2005 The American Physical Society.
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DOI
10.1103/PhysRevB.71.155208
Appears in Collections:
자연과학대학 > 물리학전공 > Journal papers
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