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Bi-induced vibrational modes in GaAsBi

Title
Bi-induced vibrational modes in GaAsBi
Authors
Seong M.J.Francoeur S.Yoon S.Mascarenhas A.Tixier S.Adamcyk M.Tiedje T.
Ewha Authors
윤석현
SCOPUS Author ID
윤석현scopus
Issue Date
2005
Journal Title
Superlattices and Microstructures
ISSN
0749-6036JCR Link
Citation
Superlattices and Microstructures vol. 37, no. 6, pp. 394 - 400
Indexed
SCIE; SCOPUS WOS scopus
Document Type
Article
Abstract
We have studied GaAs1-xBix (up to x∼3%) using Raman scattering with two different polarization configurations. Two Bi-induced phonon modes are observed at ∼186 cm-1 and ∼214 cm -1 with increasing Raman intensity as the Bi concentration increases. By comparing Raman selection rules for the observed Bi-induced phonon modes with those for the substitutional N vibrational mode (GaN mode) in GaAsN, the phonon mode at ∼214 cm-1 is identified as originating from substitutional Bi at the As site in GaAsBi. © 2005 Elsevier Ltd. All rights reserved.
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DOI
10.1016/j.spmi.2005.02.004
Appears in Collections:
자연과학대학 > 물리학전공 > Journal papers
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