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dc.contributor.author박성민-
dc.date.accessioned2018-05-02T08:15:56Z-
dc.date.available2018-05-02T08:15:56Z-
dc.date.issued2004-
dc.identifier.issn0018-9200-
dc.identifier.otherOAK-2200-
dc.identifier.urihttp://dspace.ewha.ac.kr/handle/2015.oak/242837-
dc.description.abstractA 1-Gb/s differential transimpedance amplifier (TIA) is realized in a 0.25-μm standard CMOS technology, incorporating the regulated cascode input configuration. The TIA chip is then integrated with a p-i-n photodiode on an oxidized phosphorous-silicon (OPS) substrate by employing the multi-chip-on-oxide (MCO) technology. The MCO TIA demonstrates 80-dBΩ transimpedance gain, 670-MHz bandwidth for 1-pF photodiode capacitance, 0.54-μA average input noise current, - 17-dBm sensitivity for 10 -12 bit-error rate (BER), and 27-mW power dissipation from a single 2.5-V supply. It also shows negligible switching noise effect from an embedded VCO on the OPS substrate. Furthermore, a four-channel MCO TIA array is implemented for optical interconnects, resulting in less than - 40-dB crosstalk between adjacent channels.-
dc.languageEnglish-
dc.title1-Gb/s 80-dBΩ fully differential CMOS transimpedance amplifier in multichip on oxide technology for optical interconnects-
dc.typeArticle-
dc.relation.issue6-
dc.relation.volume39-
dc.relation.indexSCIE-
dc.relation.indexSCOPUS-
dc.relation.startpage971-
dc.relation.lastpage974-
dc.relation.journaltitleIEEE Journal of Solid-State Circuits-
dc.identifier.doi10.1109/JSSC.2004.827795-
dc.identifier.wosidWOS:000221803600014-
dc.identifier.scopusid2-s2.0-2942689655-
dc.author.googlePark S.M.-
dc.author.googleLee J.-
dc.author.googleYoo H.-J.-
dc.contributor.scopusid박성민(7501832231)-
dc.date.modifydate20180501154348-
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엘텍공과대학 > 전자공학과 > Journal papers
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