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Multi-level non-volatile organic transistor-based memory using lithium-ion-encapsulated fullerene as a charge trapping layer
- Title
- Multi-level non-volatile organic transistor-based memory using lithium-ion-encapsulated fullerene as a charge trapping layer
- Authors
- Tran C.M.; Sakai H.; Kawashima Y.; Ohkubo K.; Fukuzumi S.; Murata H.
- Ewha Authors
- Shunichi Fukuzumi
- SCOPUS Author ID
- Shunichi Fukuzumi
- Issue Date
- 2017
- Journal Title
- Organic Electronics: physics, materials, applications
- ISSN
- 1566-1199
- Citation
- Organic Electronics: physics, materials, applications vol. 45, pp. 234 - 239
- Keywords
- Electron trapping; Lithium-ion-encapsulated fullerene; Multi-level non-volatile organic memory
- Publisher
- Elsevier B.V.
- Indexed
- SCIE; SCOPUS
- Document Type
- Article
- Abstract
- We report on multi-level non-volatile organic transistor-based memory using pentacene semiconductor and a lithium-ion-encapsulated fullerene (Li+@C60) as a charge trapping layer. Memory organic field-effect transistors (OFETs) with a Si++/SiO2/Li+@C60/Cytop/Pentacene/Cu structure exhibited a performance of p-type transistor with a threshold voltage (Vth) of −5.98 V and a mobility (μ) of 0.84 cm2 V−1 s−1. The multi-level memory OFETs exhibited memory windows (ΔVth) of approximate 10 V, 16 V, and 32 V, with a programming gate voltage of 150 V for 0.5 s, 5 s, and 50 s, and an erasing gate voltage of −150 V for 0.17 s, 1.7 s, and 17 s, respectively. Four logic states were clearly distinguishable in our multi-level memory, and its data could be programmed or erased many times. The multi-level memory effect in our OFETs is ascribed to the electron-trapping ability of the Li+@C60 layer. © 2017 Elsevier B.V.
- DOI
- 10.1016/j.orgel.2017.03.018
- Appears in Collections:
- 자연과학대학 > 화학·나노과학전공 > Journal papers
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