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dc.contributor.author윤석현*
dc.date.accessioned2017-02-15T08:02:39Z-
dc.date.available2017-02-15T08:02:39Z-
dc.date.issued2007*
dc.identifier.issn0003-6951*
dc.identifier.otherOAK-4218*
dc.identifier.urihttps://dspace.ewha.ac.kr/handle/2015.oak/234440-
dc.description.abstractLight scattering measurements in the dilute isoelectronically doped alloy Ga As1-x Bix reveal a large free electron population photogenerated by continuous-wave laser excitation at low temperature. Low-temperature time-resolved photoluminescence of the bismuth related near-band-gap states show carrier lifetimes of several nanoseconds. The authors attribute this to trapping of photoexcited holes at bismuth pair or cluster states located near the valence band maximum. © 2007 American Institute of Physics.*
dc.languageEnglish*
dc.titlePhotogenerated plasmons in GaAs1-xBix*
dc.typeArticle*
dc.relation.issue8*
dc.relation.volume91*
dc.relation.indexSCI*
dc.relation.indexSCIE*
dc.relation.indexSCOPUS*
dc.relation.journaltitleApplied Physics Letters*
dc.identifier.doi10.1063/1.2770760*
dc.identifier.wosidWOS:000248984800044*
dc.identifier.scopusid2-s2.0-34548281226*
dc.author.googleYoon S.*
dc.author.googleSeong M.J.*
dc.author.googleFluegel B.*
dc.author.googleMascarenhas A.*
dc.author.googleTixier S.*
dc.author.googleTiedje T.*
dc.contributor.scopusid윤석현(55732105900)*
dc.date.modifydate20231120162901*


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