Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 윤석현 | * |
dc.date.accessioned | 2017-02-15T08:02:39Z | - |
dc.date.available | 2017-02-15T08:02:39Z | - |
dc.date.issued | 2007 | * |
dc.identifier.issn | 0003-6951 | * |
dc.identifier.other | OAK-4218 | * |
dc.identifier.uri | https://dspace.ewha.ac.kr/handle/2015.oak/234440 | - |
dc.description.abstract | Light scattering measurements in the dilute isoelectronically doped alloy Ga As1-x Bix reveal a large free electron population photogenerated by continuous-wave laser excitation at low temperature. Low-temperature time-resolved photoluminescence of the bismuth related near-band-gap states show carrier lifetimes of several nanoseconds. The authors attribute this to trapping of photoexcited holes at bismuth pair or cluster states located near the valence band maximum. © 2007 American Institute of Physics. | * |
dc.language | English | * |
dc.title | Photogenerated plasmons in GaAs1-xBix | * |
dc.type | Article | * |
dc.relation.issue | 8 | * |
dc.relation.volume | 91 | * |
dc.relation.index | SCI | * |
dc.relation.index | SCIE | * |
dc.relation.index | SCOPUS | * |
dc.relation.journaltitle | Applied Physics Letters | * |
dc.identifier.doi | 10.1063/1.2770760 | * |
dc.identifier.wosid | WOS:000248984800044 | * |
dc.identifier.scopusid | 2-s2.0-34548281226 | * |
dc.author.google | Yoon S. | * |
dc.author.google | Seong M.J. | * |
dc.author.google | Fluegel B. | * |
dc.author.google | Mascarenhas A. | * |
dc.author.google | Tixier S. | * |
dc.author.google | Tiedje T. | * |
dc.contributor.scopusid | 윤석현(55732105900) | * |
dc.date.modifydate | 20231120162901 | * |