Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 김경곤 | * |
dc.date.accessioned | 2016-12-28T02:12:34Z | - |
dc.date.available | 2016-12-28T02:12:34Z | - |
dc.date.issued | 2016 | * |
dc.identifier.issn | 1094-4087 | * |
dc.identifier.other | OAK-19738 | * |
dc.identifier.uri | https://dspace.ewha.ac.kr/handle/2015.oak/233327 | - |
dc.description.abstract | A near infrared organic photodiode (OPD) utilizing a double electron blocking layer (EBL) fabricated by the sequential deposition of molybdenum (VI) oxide (MoO3) and poly(3,4ethylenedioxythiophene):poly(styrene-sulfonate) (PEDOT:PSS) is reported. The double EBL improves the on/off current ratio of OPD up to 1.36 × 104 at -1V, which is one order of magnitude higher than PEDOT:PSS single EBL (2.45 × 103) and three orders of magnitude higher than that of MoO3 single EBL (7.86). The detectivity at near infrared (800 nm) at -1V is 4.90 × 1011 Jones, which is 2.83 times higher than the PEDOT:PSS single EBL and 2 magnitudes higher compared to the MoO3 single EBL. © 2016 Optical Society of America. | * |
dc.language | English | * |
dc.publisher | OSA - The Optical Society | * |
dc.title | Near infrared organic photodetector utilizing a double electron blocking layer | * |
dc.type | Article | * |
dc.relation.issue | 22 | * |
dc.relation.volume | 24 | * |
dc.relation.index | SCIE | * |
dc.relation.index | SCOPUS | * |
dc.relation.startpage | 25308 | * |
dc.relation.lastpage | 25316 | * |
dc.relation.journaltitle | Optics Express | * |
dc.identifier.doi | 10.1364/OE.24.025308 | * |
dc.identifier.wosid | WOS:000388413400061 | * |
dc.identifier.scopusid | 2-s2.0-84994784746 | * |
dc.author.google | Shafian S. | * |
dc.author.google | Hwang H. | * |
dc.author.google | Kim K. | * |
dc.contributor.scopusid | 김경곤(7409321823) | * |
dc.date.modifydate | 20240220113038 | * |