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Highly Efficient Perovskite-Quantum-Dot Light-Emitting Diodes by Surface Engineering

Title
Highly Efficient Perovskite-Quantum-Dot Light-Emitting Diodes by Surface Engineering
Authors
Pan J.Quan L.N.Zhao Y.Peng W.Murali B.Sarmah S.P.Yuan M.Sinatra L.Alyami N.M.Liu J.Yassitepe E.Yang Z.Voznyy O.Comin R.Hedhili M.N.Mohammed O.F.Lu Z.H.Kim D.H.Sargent E.H.Bakr O.M.
Ewha Authors
김동하
SCOPUS Author ID
김동하scopus
Issue Date
2016
Journal Title
Advanced Materials
ISSN
0935-9648JCR Link
Citation
Advanced Materials vol. 28, no. 39, pp. 8718 - 8725
Keywords
CsPbBr3external quantum efficiencylight-emitting diodesperovskitequantum dots
Publisher
Wiley-VCH Verlag
Indexed
SCIE; SCOPUS WOS scopus
Document Type
Article
Abstract
Researchers conducted investigations to realize highly stable films of CsPbX3 quantum dots (QDs) capped with a halide ion pair dimethyl ammonium bromide (DDAB)), a relatively short ligand that facilitated carrier transport in the QD film and enabled the researchers to fabricate efficient perovskite LEDs (PeLEDs). The synthesis of these films was only possible through the design of a ligand-exchange strategy that included an intermediate step to desorb protonated OAm, which would result in the degradation of all-inorganic perovskite QDs (APQDs) through a direct conventional ligand-exchange route.
DOI
10.1002/adma.201600784
Appears in Collections:
자연과학대학 > 화학·나노과학전공 > Journal papers
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