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Controllable Threshold Voltage in Organic Complementary Logic Circuits with an Electron-Trapping Polymer and Photoactive Gate Dielectric Layer

Title
Controllable Threshold Voltage in Organic Complementary Logic Circuits with an Electron-Trapping Polymer and Photoactive Gate Dielectric Layer
Authors
Toan Thanh DaoSakai, HeisukeHai Thanh NguyenOhkubo, KeiFukuzumi, ShunichiMurate, Hideyuki
Ewha Authors
Shunichi FukuzumiKei Okubo
SCOPUS Author ID
Shunichi Fukuzumiscopusscopus; Kei Okuboscopus
Issue Date
2016
Journal Title
ACS APPLIED MATERIALS & INTERFACES
ISSN
1944-8244JCR Link
Citation
ACS APPLIED MATERIALS & INTERFACES vol. 8, no. 28, pp. 18249 - 18255
Keywords
organic field-effect transistorscontrollable threshold voltageorganic complementary circuitCMOSlong retention timelow program voltage
Publisher
AMER CHEMICAL SOC
Indexed
SCIE; SCOPUS WOS scopus
Document Type
Article
Abstract
We present controllable and reliable complementary organic transistor circuits on a PET substrate using a photoactive dielectric layer of 6-[4'-(N,N-diphenylamino)pheny1]-3-ethoxycarbonylcoumarin (DPA-CM) doped into poly(methyl methacrylate) (PMMA) and an electron-trapping layer of poly(perfluoroalkenyl vinyl ether) (Cytop). Cu was used for a source/drain electrode in both the p-channel and n-channel transistors. The threshold voltage of the transistors and the inverting voltage of the circuits were reversibly controlled over a wide range under a program voltage of less than 10 V and under UV light irradiation. At a program voltage of -2 V, the inverting voltage of the circuits was tuned to be at nearly half of the supply voltage of the circuit. Consequently, an excellent balance between the high and low noise margins (NM) was produced (64% of NMH and 68% of NML), resulting in maximum noise immunity. Furthermore, the programmed circuits showed high stability, such as a retention time of over 10(5) s for the inverter switching voltage. Our findings bring about a flexible, simple way to obtain robust, high-performance organic circuits using a controllable complementary transistor inverter.
DOI
10.1021/acsami.6b03183
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자연과학대학 > 화학·나노과학전공 > Journal papers
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