IEEE Electron Device Letters vol. 22, no. 9, pp. 449 - 451
SCI; SCIE; SCOPUS
The low-frequency noise characteristics of SOI MOSFETs with shallow trench isolation (STI) structure are investigated for various device sizes with three different gate shapes. Devices with channel region butted to the STI show the increase of low-frequency noise as the channel width is reduced. In comparison, the devices without the STI butted to channel region show much less increasing noise power spectral density with the channel width. From the charge pumping and noise measurement results, the interface-state generated by the STI process is identified as the cause of these anomalous phenomena.