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dc.contributor.author신형순*
dc.contributor.author김낙명*
dc.date.accessioned2016-08-28T11:08:35Z-
dc.date.available2016-08-28T11:08:35Z-
dc.date.issued1999*
dc.identifier.issn0741-3106*
dc.identifier.otherOAK-12529*
dc.identifier.urihttps://dspace.ewha.ac.kr/handle/2015.oak/228656-
dc.description.abstractThe effect of trench-oxide depth on the alpha-particle-induced charge collection is analyzed for the first time. From the simulation results, it was found that the depth of trench oxide has a considerable influence on the amount of collected charge. The confining of generated charge by the trench oxide was identified as a cause of this anomalous effect. Therefore, the tradeoff between soft error rate and cell to cell isolation characteristics should be considered in optimizing the depth of trench oxide.*
dc.languageEnglish*
dc.publisherIEEE, Piscataway, NJ, United States*
dc.titleAnomalous effect of trench-oxide depth on alpha-particle-induced charge collection*
dc.typeArticle*
dc.relation.issue6*
dc.relation.volume20*
dc.relation.indexSCI*
dc.relation.indexSCIE*
dc.relation.indexSCOPUS*
dc.relation.startpage280*
dc.relation.lastpage282*
dc.relation.journaltitleIEEE Electron Device Letters*
dc.identifier.doi10.1109/55.767098*
dc.identifier.wosidWOS:000080708200007*
dc.identifier.scopusid2-s2.0-0032656885*
dc.author.googleShin H.*
dc.author.googleKim N.-M.*
dc.contributor.scopusid신형순(7404012125)*
dc.contributor.scopusid김낙명(7403396350)*
dc.date.modifydate20240322125227*
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공과대학 > 전자전기공학전공 > Journal papers
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