Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 신형순 | * |
dc.contributor.author | 김낙명 | * |
dc.date.accessioned | 2016-08-28T11:08:35Z | - |
dc.date.available | 2016-08-28T11:08:35Z | - |
dc.date.issued | 1999 | * |
dc.identifier.issn | 0741-3106 | * |
dc.identifier.other | OAK-12529 | * |
dc.identifier.uri | https://dspace.ewha.ac.kr/handle/2015.oak/228656 | - |
dc.description.abstract | The effect of trench-oxide depth on the alpha-particle-induced charge collection is analyzed for the first time. From the simulation results, it was found that the depth of trench oxide has a considerable influence on the amount of collected charge. The confining of generated charge by the trench oxide was identified as a cause of this anomalous effect. Therefore, the tradeoff between soft error rate and cell to cell isolation characteristics should be considered in optimizing the depth of trench oxide. | * |
dc.language | English | * |
dc.publisher | IEEE, Piscataway, NJ, United States | * |
dc.title | Anomalous effect of trench-oxide depth on alpha-particle-induced charge collection | * |
dc.type | Article | * |
dc.relation.issue | 6 | * |
dc.relation.volume | 20 | * |
dc.relation.index | SCI | * |
dc.relation.index | SCIE | * |
dc.relation.index | SCOPUS | * |
dc.relation.startpage | 280 | * |
dc.relation.lastpage | 282 | * |
dc.relation.journaltitle | IEEE Electron Device Letters | * |
dc.identifier.doi | 10.1109/55.767098 | * |
dc.identifier.wosid | WOS:000080708200007 | * |
dc.identifier.scopusid | 2-s2.0-0032656885 | * |
dc.author.google | Shin H. | * |
dc.author.google | Kim N.-M. | * |
dc.contributor.scopusid | 신형순(7404012125) | * |
dc.contributor.scopusid | 김낙명(7403396350) | * |
dc.date.modifydate | 20240322125227 | * |