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Anomalous effect of trench-oxide depth on alpha-particle-induced charge collection

Title
Anomalous effect of trench-oxide depth on alpha-particle-induced charge collection
Authors
Shin H.Kim N.-M.
Ewha Authors
신형순김낙명
SCOPUS Author ID
신형순scopus; 김낙명scopus
Issue Date
1999
Journal Title
IEEE Electron Device Letters
ISSN
0741-3106JCR Link
Citation
IEEE Electron Device Letters vol. 20, no. 6, pp. 280 - 282
Publisher
IEEE, Piscataway, NJ, United States
Indexed
SCIE; SCOPUS WOS scopus
Document Type
Article
Abstract
The effect of trench-oxide depth on the alpha-particle-induced charge collection is analyzed for the first time. From the simulation results, it was found that the depth of trench oxide has a considerable influence on the amount of collected charge. The confining of generated charge by the trench oxide was identified as a cause of this anomalous effect. Therefore, the tradeoff between soft error rate and cell to cell isolation characteristics should be considered in optimizing the depth of trench oxide.
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DOI
10.1109/55.767098
Appears in Collections:
엘텍공과대학 > 전자공학과 > Journal papers
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