DSpace at EWHA: Electronic structure of ternary alloy semiconductors

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DC Field	Value	Language
dc.contributor.author	모혜정	*
dc.date.accessioned	2016-08-28T11:08:32Z	-
dc.date.available	2016-08-28T11:08:32Z	-
dc.date.issued	1996	*
dc.identifier.issn	0038-1098	*
dc.identifier.other	OAK-12479	*
dc.identifier.uri	https://dspace.ewha.ac.kr/handle/2015.oak/228620	-
dc.description.abstract	The results of energy gap variation in ternary alloy semiconductors (A1-xBxC) are reported within the tight-binding (TB) framework of Koster and Slater by universalizing TB parameters as a function of x, in which the effects of lattice relaxation and composition disorder are involved appropriately. A good agreement is obtained between the calculated results and existing experimental data.	*
dc.language	English	*
dc.title	Electronic structure of ternary alloy semiconductors	*
dc.type	Article	*
dc.relation.issue	4	*
dc.relation.volume	97	*
dc.relation.index	SCI	*
dc.relation.index	SCIE	*
dc.relation.index	SCOPUS	*
dc.relation.startpage	315	*
dc.relation.lastpage	318	*
dc.relation.journaltitle	Solid State Communications	*
dc.identifier.doi	10.1016/0038-1098(95)00578-1	*
dc.identifier.scopusid	2-s2.0-0029756694	*
dc.author.google	Shim K.	*
dc.author.google	Talwar D.N.	*
dc.author.google	Moh H.-J.	*
dc.contributor.scopusid	모혜정(6506727433)	*
dc.date.modifydate	20240423081003	*