View : 292 Download: 0

Full metadata record

DC Field Value Language
dc.contributor.author신형순-
dc.contributor.author이승준-
dc.date.accessioned2016-08-28T11:08:25Z-
dc.date.available2016-08-28T11:08:25Z-
dc.date.issued2014-
dc.identifier.issn0018-9383-
dc.identifier.otherOAK-12390-
dc.identifier.urihttps://dspace.ewha.ac.kr/handle/2015.oak/228556-
dc.description.abstractMagnetic tunnel junction (MTJ); magnetoresistive random access memory (MRAM); spin-transfer torque (STT); tunneling magnetoresistance (TMR)-
dc.languageEnglish-
dc.publisherInstitute of Electrical and Electronics Engineers Inc.-
dc.titleAdvanced circuit-level model for temperature-sensitive read/write operation of a magnetic tunnel junction-
dc.typeArticle-
dc.relation.issue2-
dc.relation.volume62-
dc.relation.indexSCI-
dc.relation.indexSCIE-
dc.relation.indexSCOPUS-
dc.relation.startpage666-
dc.relation.lastpage672-
dc.relation.journaltitleIEEE Transactions on Electron Devices-
dc.identifier.doi10.1109/TED.2014.2380819-
dc.identifier.wosidWOS:000348386100059-
dc.identifier.scopusid2-s2.0-84921761370-
dc.author.googleLim H.-
dc.author.googleLee S.-
dc.author.googleShin H.-
dc.contributor.scopusid신형순(7404012125)-
dc.contributor.scopusid이승준(36064894500;57207064952)-
dc.date.modifydate20211210154130-
Appears in Collections:
엘텍공과대학 > 전자공학과 > Journal papers
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE