DSpace at EWHA: Substrate doping concentration dependence of electron mobility enhancement in uniaxial strained (110)/<110> nMOSFETs

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DC Field	Value	Language
dc.contributor.author	신형순	*
dc.date.accessioned	2016-08-28T11:08:15Z	-
dc.date.available	2016-08-28T11:08:15Z	-
dc.date.issued	2014	*
dc.identifier.issn	1598-1657	*
dc.identifier.other	OAK-12233	*
dc.identifier.uri	https://dspace.ewha.ac.kr/handle/2015.oak/228442	-
dc.description.abstract	Electron mobility; Intervalley phonon mobility; Intravalley phonon mobility; Strain; Stress; Wafer orientation	*
dc.language	English	*
dc.publisher	Institute of Electronics Engineers of Korea	*
dc.title	Substrate doping concentration dependence of electron mobility enhancement in uniaxial strained (110)/<110> nMOSFETs	*
dc.type	Article	*
dc.relation.issue	5	*
dc.relation.volume	14	*
dc.relation.index	SCIE	*
dc.relation.index	SCOPUS	*
dc.relation.index	KCI	*
dc.relation.startpage	518	*
dc.relation.lastpage	524	*
dc.relation.journaltitle	Journal of Semiconductor Technology and Science	*
dc.identifier.doi	10.5573/JSTS.2014.14.5.518	*
dc.identifier.wosid	WOS:000346137400004	*
dc.identifier.scopusid	2-s2.0-84908317401	*
dc.author.google	Sun W.	*
dc.author.google	Choi S.	*
dc.author.google	Shin H.	*
dc.contributor.scopusid	신형순(7404012125)	*
dc.date.modifydate	20240322125227	*