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dc.contributor.authorJean Charles Ribierre-
dc.date.accessioned2016-08-28T11:08:05Z-
dc.date.available2016-08-28T11:08:05Z-
dc.date.issued2014-
dc.identifier.issn1566-1199-
dc.identifier.otherOAK-12105-
dc.identifier.urihttps://dspace.ewha.ac.kr/handle/2015.oak/228350-
dc.description.abstractConjugated block copolymer; Ferroelectric polymer; Flexible non-volatile memory; Interlayer; Polymer ferroelectric-gate field effect transistor memory; Reduced graphene oxide-
dc.languageEnglish-
dc.publisherElsevier-
dc.titleThin reduced graphene oxide interlayer with a conjugated block copolymer for high performance non-volatile ferroelectric polymer memory-
dc.typeArticle-
dc.relation.issue11-
dc.relation.volume15-
dc.relation.indexSCIE-
dc.relation.indexSCOPUS-
dc.relation.startpage2719-
dc.relation.lastpage2727-
dc.relation.journaltitleOrganic Electronics: physics, materials, applications-
dc.identifier.doi10.1016/j.orgel.2014.07.035-
dc.identifier.wosidWOS:000344424500012-
dc.identifier.scopusid2-s2.0-84906704668-
dc.author.googleVelusamy D.B.-
dc.author.googleKim R.H.-
dc.author.googleTakaishi K.-
dc.author.googleMuto T.-
dc.author.googleHashizume D.-
dc.author.googleLee S.-
dc.author.googleUchiyama M.-
dc.author.googleAoyama T.-
dc.author.googleRibierre J.-C.-
dc.author.googlePark C.-
dc.date.modifydate20180104081001-
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자연과학대학 > 물리학전공 > Journal papers
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