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dc.contributor.author신형순*
dc.date.accessioned2016-08-28T11:08:54Z-
dc.date.available2016-08-28T11:08:54Z-
dc.date.issued2014*
dc.identifier.issn0038-1101*
dc.identifier.otherOAK-11249*
dc.identifier.urihttps://dspace.ewha.ac.kr/handle/2015.oak/227678-
dc.description.abstractBiaxial strain; Electron mobility; Strained Si; Stress; Uniaxial strain*
dc.languageEnglish*
dc.titleOptimization of uniaxial stress for high electron mobility on biaxially-strained n-MOSFETs*
dc.typeArticle*
dc.relation.volume94*
dc.relation.indexSCI*
dc.relation.indexSCIE*
dc.relation.indexSCOPUS*
dc.relation.startpage23*
dc.relation.lastpage27*
dc.relation.journaltitleSolid-State Electronics*
dc.identifier.doi10.1016/j.sse.2014.01.005*
dc.identifier.wosidWOS:000334097000006*
dc.identifier.scopusid2-s2.0-84894033735*
dc.author.googleSun W.*
dc.author.googleShin H.*
dc.contributor.scopusid신형순(7404012125)*
dc.date.modifydate20240322125227*
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공과대학 > 전자전기공학전공 > Journal papers
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