DSpace at EWHA: Influence of oxygen annealing conditions on the electronic structure, dielectric function, and charge conduction of gallium-ferrite thin films

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DC Field	Value	Language
dc.contributor.author	조윌렴	*
dc.date.accessioned	2016-08-28T11:08:22Z	-
dc.date.available	2016-08-28T11:08:22Z	-
dc.date.issued	2013	*
dc.identifier.issn	0374-4884	*
dc.identifier.other	OAK-10825	*
dc.identifier.uri	https://dspace.ewha.ac.kr/handle/2015.oak/227342	-
dc.description.abstract	Charge conduction; Dielectric function; Fe valence; Gallium ferrite; Oxygen vacancies	*
dc.language	English	*
dc.title	Influence of oxygen annealing conditions on the electronic structure, dielectric function, and charge conduction of gallium-ferrite thin films	*
dc.type	Article	*
dc.relation.issue	11	*
dc.relation.volume	63	*
dc.relation.index	SCI	*
dc.relation.index	SCIE	*
dc.relation.index	SCOPUS	*
dc.relation.index	KCI	*
dc.relation.startpage	2179	*
dc.relation.lastpage	2184	*
dc.relation.journaltitle	Journal of the Korean Physical Society	*
dc.identifier.doi	10.3938/jkps.63.2179	*
dc.identifier.wosid	WOS:000328627800024	*
dc.identifier.scopusid	2-s2.0-84890532762	*
dc.author.google	Shin R.H.	*
dc.author.google	Oh S.H.	*
dc.author.google	Lee J.H.	*
dc.author.google	Jo W.	*
dc.author.google	Jang S.	*
dc.author.google	Han M.	*
dc.author.google	Choi S.	*
dc.contributor.scopusid	조윌렴(7103322276)	*
dc.date.modifydate	20240123091004	*