View : 828 Download: 0

Full metadata record

DC Field Value Language
dc.contributor.author신형순*
dc.date.accessioned2016-08-28T10:08:15Z-
dc.date.available2016-08-28T10:08:15Z-
dc.date.issued2013*
dc.identifier.issn0020-7217*
dc.identifier.otherOAK-10285*
dc.identifier.urihttps://dspace.ewha.ac.kr/handle/2015.oak/223890-
dc.description.abstractWe present a new I-V model for a long-channel surrounding-gate (SG) metal-oxide-semiconductor field-effect transistor (MOSFET). SG MOSFET is a strong candidate for next generation nanoscale devices due to a high electrostatic channel control, which in turn substantially reduces the short-channel effect. The new model takes into account quantum mechanical (QM) effects in the SG MOSFET using a double triangular QM well model in the strong inversion regime. In contrast with the old model, we consider the Vg dependence of the QM effect. New model yields excellent agreement with 2-D numerical simulation results for various radii and gate oxide thicknesses of the SG MOSFET. © 2013 Copyright Taylor and Francis Group, LLC.*
dc.languageEnglish*
dc.titleA new I-V model for surrounding-gate MOSFET considering gate-voltage-dependent quantum effect*
dc.typeArticle*
dc.relation.issue8*
dc.relation.volume100*
dc.relation.indexSCI*
dc.relation.indexSCIE*
dc.relation.indexSCOPUS*
dc.relation.startpage1072*
dc.relation.lastpage1079*
dc.relation.journaltitleInternational Journal of Electronics*
dc.identifier.doi10.1080/00207217.2012.743063*
dc.identifier.wosidWOS:000321689900004*
dc.identifier.scopusid2-s2.0-84880309842*
dc.author.googleKim J.*
dc.author.googleSun W.*
dc.author.googleShin H.*
dc.contributor.scopusid신형순(7404012125)*
dc.date.modifydate20240322125227*
Appears in Collections:
공과대학 > 전자전기공학전공 > Journal papers
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

BROWSE