A new I-V model for surrounding-gate MOSFET considering gate-voltage-dependent quantum effect

Abstract

We present a new I-V model for a long-channel surrounding-gate (SG) metal-oxide-semiconductor field-effect transistor (MOSFET). SG MOSFET is a strong candidate for next generation nanoscale devices due to a high electrostatic channel control, which in turn substantially reduces the short-channel effect. The new model takes into account quantum mechanical (QM) effects in the SG MOSFET using a double triangular QM well model in the strong inversion regime. In contrast with the old model, we consider the Vg dependence of the QM effect. New model yields excellent agreement with 2-D numerical simulation results for various radii and gate oxide thicknesses of the SG MOSFET. © 2013 Copyright Taylor and Francis Group, LLC.