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dc.contributor.author황성주-
dc.date.accessioned2016-08-28T10:08:17Z-
dc.date.available2016-08-28T10:08:17Z-
dc.date.issued2013-
dc.identifier.issn2045-2322-
dc.identifier.otherOAK-9639-
dc.identifier.urihttps://dspace.ewha.ac.kr/handle/2015.oak/223333-
dc.description.abstractThe reported photocurrent density (J SC) of PbS quantum dot (QD)-sensitized solar cell was less than 19 mA/cm2 despite the capability to generate 38 mA/cm2, which results from inefficient electron injection and fast charge recombination. Here, we report on a PbS:Hg QD-sensitized solar cell with an unprecedentedly high J SC of 30 mA/cm2. By Hg 2+ doping into PbS, J SC is almost doubled with improved stability. Femtosecond transient study confirms that the improved J SC is due to enhanced electron injection and suppressed charge recombination. EXAFS reveals that Pb-S bond is reinforced and structural disorder is reduced by interstitially incorporated Hg2+, which is responsible for the enhanced electron injection, suppressed recombination and stability. Thanks to the extremely high J SC, power conversion efficiency of 5.6% is demonstrated at one sun illumination.-
dc.languageEnglish-
dc.titleQuantum-dot-sensitized solar cell with unprecedentedly high photocurrent-
dc.typeArticle-
dc.relation.volume3-
dc.relation.indexSCIE-
dc.relation.indexSCOPUS-
dc.relation.journaltitleScientific Reports-
dc.identifier.doi10.1038/srep01050-
dc.identifier.wosidWOS:000313418100005-
dc.identifier.scopusid2-s2.0-84872713504-
dc.author.googleLee J.-W.-
dc.author.googleSon D.-Y.-
dc.author.googleAhn T.K.-
dc.author.googleShin H.-W.-
dc.author.googleKim I.Y.-
dc.author.googleHwang S.-J.-
dc.author.googleKo M.J.-
dc.author.googleSul S.-
dc.author.googleHan H.-
dc.author.googlePark N.-G.-
dc.contributor.scopusid황성주(7404626171)-
dc.date.modifydate20190901081003-


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