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dc.contributor.author황성주-
dc.date.accessioned2016-08-28T12:08:30Z-
dc.date.available2016-08-28T12:08:30Z-
dc.date.issued2012-
dc.identifier.issn0002-7820-
dc.identifier.otherOAK-8862-
dc.identifier.urihttps://dspace.ewha.ac.kr/handle/2015.oak/222715-
dc.description.abstractWhen Bi 2O 3 was added to LiAlSiO 4 ceramics, Bi 12SiO 20 secondary phase was formed. Since the melting temperature of Bi 12SiO 20 ceramics is 880°C, the liquid phase is expected to form during sintering and to assist the densification of LiAlSiO 4 ceramics. When 15.0 mol% Bi 2O 3 was added, the LiAlSiO 4 ceramics could be sintered at 900°C, and with 20.0 mol% Bi 2O 3 they could even be sintered at 875°C. The 15.0 mol% Bi 2O 3-doped LiAlSiO 4 ceramics sintered at 900°C exhibited good microwave dielectric properties, namely, a low ε r of 4.3, a high Q × f of 62 430 GHz and a small τ f of -16.21 ppm/ oC. © 2012 The American Ceramic Society.-
dc.languageEnglish-
dc.titleEffect of Bi 2 O 3 doping on the sintering temperature and microwave dielectric properties of Li Al SiO 4 ceramics-
dc.typeArticle-
dc.relation.issue6-
dc.relation.volume95-
dc.relation.indexSCIE-
dc.relation.indexSCOPUS-
dc.relation.startpage1811-
dc.relation.lastpage1813-
dc.relation.journaltitleJournal of the American Ceramic Society-
dc.identifier.doi10.1111/j.1551-2916.2012.05222.x-
dc.identifier.wosidWOS:000304765500007-
dc.identifier.scopusid2-s2.0-84861838625-
dc.author.googleJeong B.-J.-
dc.author.googleJoung M.-R.-
dc.author.googleKweon S.-H.-
dc.author.googleKim J.-S.-
dc.author.googleNahm S.-
dc.author.googleChoi J.-W.-
dc.author.googleHwang S.-J.-
dc.contributor.scopusid황성주(7404626171)-
dc.date.modifydate20190901081003-
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자연과학대학 > 화학·나노과학전공 > Journal papers
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