Characterization of Pt/a-plane GaN Schottky contacts using conductive atomic force microscopy

Abstract

We investigated the local electrical properties of Pt Schottky contacts to a-plane n-type GaN using conductive atomic force microscopy (C-AFM). Current-voltage characteristics obtained by C-AFM showed rectifying properties, indicating nano-scale Schottky junction formation. Two-dimensional current maps revealed that the surface microstructures of GaN influenced transport properties of the junctions. Copyright © 2011 American Scientific Publishers All rights reserved.