DSpace at EWHA: Influences of interface states on the electrical properties of Pt/SrTiO3 junctions

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DC Field	Value	Language
dc.contributor.author	김동욱	*
dc.date.accessioned	2016-08-28T12:08:44Z	-
dc.date.available	2016-08-28T12:08:44Z	-
dc.date.issued	2010	*
dc.identifier.issn	0374-4884	*
dc.identifier.other	OAK-6223	*
dc.identifier.uri	https://dspace.ewha.ac.kr/handle/2015.oak/220487	-
dc.description.abstract	We report on the electrical properties of Pt/Nb-doped SrTiO3 single crystal junctions. The junctions showed rectifying current (I) - voltage (V) characteristics, indicating formation of Schottky diodes. The junction also exhibited hysteretic transport behaviors upon polarity reversal. The junction capacitance measured at 1 MHz was much smaller than those at 1 - 100 kHz. The frequency dependence revealed that deep-level trap states existed in the junctions, and that those interface states affected the electrical properties of the junctions significantly.	*
dc.language	English	*
dc.title	Influences of interface states on the electrical properties of Pt/SrTiO3 junctions	*
dc.type	Article	*
dc.relation.issue	12	*
dc.relation.volume	56	*
dc.relation.index	SCI	*
dc.relation.index	SCIE	*
dc.relation.index	SCOPUS	*
dc.relation.index	KCI	*
dc.relation.startpage	362	*
dc.relation.lastpage	365	*
dc.relation.journaltitle	Journal of the Korean Physical Society	*
dc.identifier.doi	10.3938/jkps.56.362	*
dc.identifier.wosid	WOS:000273769800003	*
dc.identifier.scopusid	2-s2.0-77956325964	*
dc.author.google	Lee S.	*
dc.author.google	Phark S.-H.	*
dc.author.google	Kim D.-W.	*
dc.contributor.scopusid	김동욱(57203350633)	*
dc.date.modifydate	20240123114549	*