Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 김봉수 | - |
dc.date.accessioned | 2016-08-27T04:08:17Z | - |
dc.date.available | 2016-08-27T04:08:17Z | - |
dc.date.issued | 2015 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.other | OAK-14676 | - |
dc.identifier.uri | https://dspace.ewha.ac.kr/handle/2015.oak/217080 | - |
dc.description.abstract | Bottom-contact bottom-gate organic field-effect transistors (OFETs) are fabricated using a low band gap pDTTDPP-DT polymer as a channel material and single-layer graphene (SLG) or Au source/drain electrodes. The SLG-DaSed ambipolar OFETs significantly outperform the Au-based ambipolar OFETs, and thermal annealing effectively improves the carrier mobilities of the pDTTDPP-DT :films. The difference is attributed to the following facts: (i) the thermally annealed pDTTDPP-DT chains on the SLG assume more crystalline features with an edge-on orientation as compared to the polymer chains on the Au, (ii) the morphological features of the thermally annealed pDTTDPP-DT films on the SLG electrodes are closer to the features of those on the gate dielectric layer, and (iii) the SLG electrode provides a flatter, more hydrophobic surface that is favorable for the polymer crystallization than the Au. In addition, the preferred carrier transport in each electrode-based OFET is associated With the HOMO/LUMO alignment relative to the Fermi level of the employed electrode. All of these "experimental results consistently explain why the carrier mobilities of the SLG-based OFET are more than 10 times higher than those of the Au-based OTFT. This work demonstrates the strong dependence of ambipolar carrier transport on the source/drain electrode and annealing temperature. | - |
dc.language | English | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.subject | ambipolar organic field-effect transistor | - |
dc.subject | single layer graphene electrode | - |
dc.subject | high carrier mobility | - |
dc.subject | low band gap polymer | - |
dc.subject | film crystallinity | - |
dc.title | High Performance of Low Band Gap Polymer-Based Ambipolar Transistor Using Single-Layer Graphene Electrodes | - |
dc.type | Article | - |
dc.relation.issue | 10 | - |
dc.relation.volume | 7 | - |
dc.relation.index | SCIE | - |
dc.relation.index | SCOPUS | - |
dc.relation.startpage | 6002 | - |
dc.relation.lastpage | 6012 | - |
dc.relation.journaltitle | ACS APPLIED MATERIALS & INTERFACES | - |
dc.identifier.doi | 10.1021/acsami.5b00747 | - |
dc.identifier.wosid | WOS:000351420300045 | - |
dc.author.google | Choi, Jong Yong | - |
dc.author.google | Kang, Woonggi | - |
dc.author.google | Kang, Boseok | - |
dc.author.google | Cha, Wonsuk | - |
dc.author.google | Son, Seon Kyoung | - |
dc.author.google | Yoon, Youngwoon | - |
dc.author.google | Kim, Hyunjung | - |
dc.author.google | Kang, Youngjong | - |
dc.author.google | Ko, Min Jae | - |
dc.author.google | Son, Hae Jung | - |
dc.author.google | Cho, Kilwon | - |
dc.author.google | Cho, Jeong Ho | - |
dc.author.google | Kim, BongSoo | - |
dc.contributor.scopusid | 김봉수(55588476300) | - |
dc.date.modifydate | 20180827081001 | - |