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dc.contributor.author김동하-
dc.date.accessioned2016-08-27T04:08:09Z-
dc.date.available2016-08-27T04:08:09Z-
dc.date.issued2015-
dc.identifier.issn0003-6951-
dc.identifier.issn1077-3118-
dc.identifier.otherOAK-12426-
dc.identifier.urihttps://dspace.ewha.ac.kr/handle/2015.oak/217000-
dc.description.abstractWe fabricated organic memory devices with metal-pentacene-insulator-silicon structure which contain double dielectric layers comprising 3D pattern of Au nanoparticles (Au NPs) and block copolymer (PS-b-P2VP). The role of Au NPs is to charge/discharge carriers upon applied voltage, while block copolymer helps to form highly ordered Au NP patterns in the dielectric layer. Double-layered nanocomposite dielectrics enhanced the charge trap density (i.e., trapped charge per unit area) by Au NPs, resulting in increase of the memory window (Delta V-th). (C) 2015 AIP Publishing LLC.-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.titleMulti-layered nanocomposite dielectrics for high density organic memory devices-
dc.typeArticle-
dc.relation.issue4-
dc.relation.volume106-
dc.relation.indexSCI-
dc.relation.indexSCIE-
dc.relation.indexSCOPUS-
dc.relation.journaltitleAPPLIED PHYSICS LETTERS-
dc.identifier.doi10.1063/1.4907320-
dc.identifier.wosidWOS:000348996200065-
dc.author.googleKang, Moonyeong-
dc.author.googleChung, Kyungwha-
dc.author.googleBaeg, Kang-Jun-
dc.author.googleKim, Dong Ha-
dc.author.googleKim, Choongik-
dc.contributor.scopusid김동하(26039227400)-
dc.date.modifydate20210929144037-


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